* ---------------------------------------------------------------------- ************* XFAB ******** MODEL PARAMETERS *************************** * ---------------------------------------------------------------------- * Simulator : ELDO version: ELDO 17.1 (64 bits) (v8.4_1.1) * Device : qpva5 * Desc : Substrate PNP * Model : 3 term BJT subckt * : eldo.bjtc.3term_subckt.pnp_vert.969 * Process : XT018 * Extracted : Wafer: M65584_w15; Date: 2016-06-01; hwald * Spec. : PDS_018_06 * Revision : 5.0.1; 2016-09-30 * ---------------------------------------------------------------------- * PARAMETERIZED * ---------------------------------------------------------------------- * NOTE: Tnom = 27 degree Celsius * .subckt qpva5 c b e par1=1 d1 c b qpva5_dbc area=6.400e+01 q1 c b e qpva5mod .model qpva5mod pnp subs=1 + bf={(1+(qpva5_abf/sqrt(par1)))*qpva5_dbf*2.005e+00} + vaf={qpva5_dvaf*1.350e+03} + is={exp((qpva5_dis)+(qpva5_ais/sqrt(par1)))*9.170e-19} + nf=1.003e+00 + isc=1.000e-18 nc=1.000e+00 + ikf={qpva5_dikf*1.820e-04} + tikf1=-5.000e-03 tikf2=1.396e-05 + ise={(1+(qpva5_aise/sqrt(par1)))*qpva5_dise*2.766e-17} + nkf=3.476e-01 ne=1.425e+00 + nr=1.006e+00 + iss=0.000e+00 ns=1.000e+00 + br=9.500e-01 var=2.263e+01 + re={qpva5_dre*7.941e+00} + tre1=2.000e-03 + tre2=0.000e+00 + rc={qpva5_drc*6.500e+01} + rb={(1+(qpva5_arb/sqrt(par1)))*qpva5_drb*1.739e+02} + rbm={qpva5_drbm*1.000e-01} + trb1=0.000e+00 trm1=0.000e+00 + irb=6.356e-04 + xcjc=1.000e+00 fc=5.000e-01 + tref=2.700e+01 + ctc=1.966e-03 cte=8.245e-04 + tvjc=2.452e-03 tvje=1.829e-03 + xtb=1.714e+00 xti=4.219e+00 + eg=1.132e+00 + tf={qpva5_dtf*2.736e-10} + xtf=0.000e+00 itf=0.000e+00 + ptf=0.000e+00 tr=3.000e-08 + vtf=0.000e+00 + cje={qpva5_dcje*6.582e-15} + mje=4.267e-01 vje=9.484e-01 + cjc={qpva5_dcjc*2.453e-14} + mjc=3.592e-01 vjc=4.530e-01 + af=1.599e+00 kf=5.235e-14 + tlevc=1.000e+00 tlev=0.000e+00 .ends qpva5 * ---------------------------------------------------------------------- * ---------------------------------------------------------------------- ************* XFAB ******** MODEL PARAMETERS *************************** * ---------------------------------------------------------------------- * Simulator : ELDO version: ELDO 17.1 (64 bits) (v8.4_1.1) * Device : qpva5_dbc * Desc : auxilary substrate diode * Model : simple forward diode model * : eldo.dio_fwd.model.-.987 * Process : XT018 * Extracted : Wafer: M65584_w15; Date: 2016-06-01; hwald * Spec. : PDS_018_06 * Revision : 5.0.1; 2016-09-30 * ---------------------------------------------------------------------- * PARAMETERIZED * ---------------------------------------------------------------------- * NOTE: Tnom = 27 degree Celsius * .model qpva5_dbc d level=1 + scalev=1 + tlev=0 + n=1.000e+00 + eg=1.120e+00 + is=2.400e-17 + xti=3.000e+00 + rs=2.000e+03 + trs=0.000e+00 + ik=1.500e-08 + tt=0.000e+00 + cjo=0.000e+00 + m=3.300e-01 + vj=7.600e-01 + fc=5.000e-01 *